{"created":"2023-05-15T10:00:16.450574+00:00","id":4592,"links":{},"metadata":{"_buckets":{"deposit":"1976ce00-024e-4400-9f6f-38a6841af170"},"_deposit":{"created_by":5,"id":"4592","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"4592"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00004592","sets":["73","73:27"]},"author_link":["12634","7290","7289","24768","24603","7725","24767"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-11-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicPageEnd":"4391","bibliographicPageStart":"4385","bibliographicVolumeNumber":"90","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Piezoelectric photothermal measurements of an Al_x Ga_<1−x> As （x=0.22, 0.28, and 0.5） epitaxial layer grown on a GaAs substrate were carried out in the temperature range of 297 to 80 K. In addition to the band gap signal of the GaAs substrate, the direct transition gaps of AlGaAs were clearly observed in the higher photon energy region. It was experimentally confirmed that the temperature coefficient of the direct transition gap of Al_x Ga_<1−x> As alloy decreases with increasing Al mole fraction. By conducting the quenching light illumination measurements at 80 K we concluded that the photoexcited electrons in the AlGaAs epitaxial layer drifted under the influence of an electric field present at the AlGaAs/GaAs interface. The drifted electrons eventually recombined with the ionized EL2 centers in the SI GaAs substrate.","subitem_description_type":"Abstract"}]},"item_10001_description_6":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The following article appeared in Journal of Applied Physics. 11/1/2001, Vol. 90 Issue 9, p4385. and may be found at http://dx.doi.org/10.1063/1.1407309","subitem_description_type":"Other"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"0000000106573887","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"https://isni.org/isni/0000000106573887"}],"affiliationNames":[{"affiliationName":"宮崎大学","affiliationNameLang":"ja"},{"affiliationName":"University of Miyazaki","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"福山, 敦彦","creatorNameLang":"ja"},{"creatorName":"フクヤマ, 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