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Photoluminescence spectra of p-GaSe doped with Cd
http://hdl.handle.net/10458/5319
http://hdl.handle.net/10458/5319f33b3151-ae2b-4082-9e1c-bc7c1c8452b6
| 名前 / ファイル | ライセンス | アクション |
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本文 (208.2 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | Photoluminescence spectra of p-GaSe doped with Cd | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| キーワード | Conduction bands, Photoluminescence, Valence bands, Doping, Emission spectra | |||||
| 資源タイプ | ||||||
| 資源タイプ | journal article | |||||
| 著者 |
重冨, 茂
× 重冨, 茂× 碇, 哲雄× Nishimura, H |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Impurity levels in Cd-doped GaSe have been studied by using photoluminescence （PL） measurements. The PL spectra at 77 K are dominated by three new emission bands at 1.95, 1.75, and 1.62 eV. The PL intensity and the peak energy of the 1.95 and 1.62 eV emission bands are measured as a function of the temperature. It is shown that the 1.95 eV emission band is due to the transition between the conduction band and the acceptor level at 0.18 eV above the valence band. The 1.62 eV emission band is caused by the transition from the donor level at 0.37 eV below the conduction band to the acceptor level at 0.13 eV above the valence band. The PL intensity increases with increasing Cd concentration. | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The following article appeared in Journal of Applied Physics. 6/1/1991, Vol. 69 Issue 11, p7936 and may be found at http://dx.doi.org/10.1063/1.347488 | |||||
| 書誌情報 |
Journal of Applied Physics 巻 69, 号 11, p. 7936-7938, 発行日 1991-06-01 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
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| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 00218979 | |||||
| 権利 | ||||||
| 権利情報 | Copyright 1991 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
