{"created":"2023-05-15T10:57:50.600306+00:00","links":{},"metadata":{"_buckets":{"deposit":"3cb7d73d-225c-4e70-ac45-06ad13285c8e"},"_deposit":{"id":"4408.1","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"4408.1"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00004408.1","sets":["73:27"]},"author_link":["12061","23336","7290","23338","23339","23341","23343","23344","23345"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-07-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"261","bibliographicPageStart":"259","bibliographicVolumeNumber":"77","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The piezoelectric photoacoustic （PPA） measurements for Cu-rich CuGaSe_2 （CGS）/GaAs（001） epitaxial layer were carried out between liquid helium and room temperatures. The band gap energies of CGS （A, B, and C bands） were measured to be 1.73, 1.83, and 2.04 eV at liquid nitrogen temperature, respectively. The A band was clearly obtained from 5 to 300 K, and the temperature dependence of the peak energy was fitted with the modified Manoogian–Woolley equation. PPA signals for CGS/GaAs （001） epitaxial layers were obtained between liquid helium and room temperature.","subitem_description_type":"Abstract"}]},"item_10001_description_6":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The following article appeared in Applied Physics Letters. 7/10/2000, Vol. 77 Issue 2 P.259 and may be found at http://dx.doi.org/10.1063/1.126943","subitem_description_type":"Other"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"吉野, 賢二"},{"creatorName":"ヨシノ, ケンジ","creatorNameLang":"ja-Kana"},{"creatorName":"Yoshino, Kenji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12061","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"80284826","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=80284826"}]},{"creatorNames":[{"creatorName":"丸岡, 大介"},{"creatorName":"マルオカ, ダイスケ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"23336","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"碇, 哲雄"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"},{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7290","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"70113214","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=70113214"}]},{"creatorNames":[{"creatorName":"仁木, 栄"},{"creatorName":"ニキ, シゲル","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"23338","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山田, 昭政"},{"creatorName":"ヤマダ, アキマサ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"23339","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Maruoka, Daisuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"23341","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fons, Paul J.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"23343","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Niki, Shigeru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"23344","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamada, Akimasa","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"23345","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"ikr_5256.pdf","filesize":[{"value":"54.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文","url":"https://miyazaki-u.repo.nii.ac.jp/record/4408.1/files/ikr_5256.pdf"},"version_id":"b6633a8f-cacc-45e5-ba73-6c5ee61be965"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Epitaxy, Band gap, Liquid helium, Electric measurements, Electron hole recombination","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe_2 thin films grown by molecular beam epitaxy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe_2 thin films grown by molecular beam epitaxy","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"2","path":["27"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-06-21"},"publish_date":"2020-06-21","publish_status":"0","recid":"4408.1","relation_version_is_last":true,"title":["Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe_2 thin films grown by molecular beam epitaxy"],"weko_creator_id":"2","weko_shared_id":2},"updated":"2023-07-24T05:44:46.924266+00:00"}