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Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe_2 thin films grown by molecular beam epitaxy
http://hdl.handle.net/10458/5256
http://hdl.handle.net/10458/52562f1c6ebd-a727-47a0-aa8c-7239bcf801ac
| 名前 / ファイル | ライセンス | アクション |
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本文 (54.5 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe_2 thin films grown by molecular beam epitaxy | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| キーワード | Epitaxy, Band gap, Liquid helium, Electric measurements, Electron hole recombination | |||||
| 資源タイプ | ||||||
| 資源タイプ | journal article | |||||
| 著者 |
吉野, 賢二
× 吉野, 賢二× 丸岡, 大介× 碇, 哲雄× 仁木, 栄× 山田, 昭政× Maruoka, Daisuke× Fons, Paul J.× 仁木, 栄× 山田, 昭政 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The piezoelectric photoacoustic （PPA） measurements for Cu-rich CuGaSe_2 （CGS）/GaAs（001） epitaxial layer were carried out between liquid helium and room temperatures. The band gap energies of CGS （A, B, and C bands） were measured to be 1.73, 1.83, and 2.04 eV at liquid nitrogen temperature, respectively. The A band was clearly obtained from 5 to 300 K, and the temperature dependence of the peak energy was fitted with the modified Manoogian–Woolley equation. PPA signals for CGS/GaAs （001） epitaxial layers were obtained between liquid helium and room temperature. | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The following article appeared in Applied Physics Letters. 7/10/2000, Vol. 77 Issue 2 P.259 and may be found at http://dx.doi.org/10.1063/1.126943 | |||||
| 書誌情報 |
Applied Physics Letters 巻 77, 号 2, p. 259-261, 発行日 2000-07-10 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
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| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 00036951 | |||||
| 権利 | ||||||
| 権利情報 | Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
