@article{oai:miyazaki-u.repo.nii.ac.jp:00004402,
 author = {重冨, 茂 and Shigetomi, Shigeru and Ikari, Tetsuo and 碇, 哲雄},
 issue = {3A},
 journal = {Japanese Journal of Applied Physics},
 month = {Mar},
 pages = {1184--1185},
 title = {Annealing Behavior of Layer Semiconductor p-InSe Doped with Hg},
 volume = {39},
 year = {2000},
 yomi = {シゲトミ, シゲル and イカリ, テツオ}
}