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Sharp band edge photoluminescence of high-purity CuInS_2 single crystals
http://hdl.handle.net/10458/5248
http://hdl.handle.net/10458/52480d86faca-8b37-4d9b-a009-1215d759a34b
| 名前 / ファイル | ライセンス | アクション |
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本文 (48.0 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | Sharp band edge photoluminescence of high-purity CuInS_2 single crystals | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| キーワード | Photoluminescence, Single crystals, Temperature measurement, Crystal growth, Excitons | |||||
| 資源タイプ | ||||||
| 資源タイプ | journal article | |||||
| 著者 |
吉野, 賢二
× 吉野, 賢二× 碇, 哲雄× 白方, 祥× 三宅, 秀人× 平松, 和政× 白方, 祥× 三宅, 秀人× Hiramatsu, Kazumasa |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Temperature-dependent photoluminescence measurements were carried out between 8 and 300 K on CuInS_2 single crystals grown by a traveling heater method. Ten distinct peaks were present in the near-band edge region. Four unknown peaks, observed at 8 K, were found to be due to bound exciton emission. Moreover, the luminescence remained stable up to room temperature. | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The following article appeared in Applied Physics Letters. 2/5/2001, Vol. 78 Issue 6, p742 and may be found at http://dx.doi.org/10.1063/1.1345802 | |||||
| 書誌情報 |
Applied Physics Letters 巻 78, 号 6, p. 742-744, 発行日 2001-02-05 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
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| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 00036951 | |||||
| 権利 | ||||||
| 権利情報 | Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
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| 出版タイプ | VoR | |||||
