@article{oai:miyazaki-u.repo.nii.ac.jp:00004290,
 author = {境, 健太郎 and Sakai, Kentaro and Fukuyama, Atsuhiko and 福山, 敦彦 and 重冨, 茂 and Shigetomi, Shigeru and Ikari, Tetsuo and 碇, 哲雄},
 issue = {10-11},
 journal = {Solid-State Electronics},
 month = {Oct},
 pages = {1873–1876--1873–1876},
 title = {Impurity and defect centers of n-type 4H-SiC single crystals investigated by a photoluminescence and a piezoelectric photo thermal spectroscopies},
 volume = {48},
 year = {2004},
 yomi = {サカイ, ケンタロウ and フクヤマ, アツヒコ and シゲトミ, シゲル and イカリ, テツオ}
}