@article{oai:miyazaki-u.repo.nii.ac.jp:00002998,
 author = {岩木, 美晴 and 中島, 雄太 and Nakashima, Yuta and 外山, 貴子 and Toyama, Takako and 淡野, 公一 and Tanno, Koichi and 石塚, 興彦 and Iwaki, Miharu and 中島, 雄太 and Nakashima, Yuta and Ishizuka, Okihiko},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Oct},
 note = {In this thesis, a low-voltage, low-power and low-noise amplifier for surface-myoelectricity signal processing
LSIs. In the proposed amplifier, the number of series-connected MOSFETs suppresses less than four in order to
maintain low-voltage operation, and the weakinversion region of MOSFETs is utilized for low power consumption.
Furthermore, the amplifier is designed based on long-channel P-channel MOSFETs in order to reduce
the 1/f noise. Using these techniques, an operational amplifier (op-amp) is designed and evaluated through
HSPICE simulations with Motorola 1.2/μm CMOS device parameters. From the simulation results, the op-amp
could be operated from 2.4V to 3.0V of the supply voltage. The power consumption and the input referred
noise were 14μW and 14μV, respectively. As the results, the low-voltage, low-power and low-noise op-amp
could be realized. Next, a instrumentation amplifier is designed using the op-amps, moreover, a amplifier for
surface-myoelectricity signal processing LSIs is also designed using the instrumentation amplifiers. Since the
proposed amplifier is adopted the double-differential architecture, the following advantages are achieved: the
elimination of the common-mode noise, the reduction of the leakage myoelectricity from adjacent lines and the
estimation for the propagation velocity of the myoelectricity. Finally, the mask layouts of the proposed circuits
were designed, and the amplifier occupied 1.8mm x 1.5mm.},
 pages = {187--193},
 title = {表面筋電位信号処理LSIのための低電圧・低消費電力・低ノイズ増幅器に関する研究},
 volume = {33},
 year = {2004},
 yomi = {イワキ, ミハル and ナカシマ, ユウタ and トヤマ, タカコ and タンノ, コウイチ and イシズカ, オキヒコ and ナカシマ, ユウタ}
}