{"created":"2023-05-15T09:58:55.612895+00:00","id":2986,"links":{},"metadata":{"_buckets":{"deposit":"2b0017bd-986d-43da-9a9f-2623f3322150"},"_deposit":{"created_by":5,"id":"2986","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2986"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002986","sets":["73","73:36","73:36:330","73:36:330:314"]},"author_link":["15857","15858","7152","12077","15861","15862","12081"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"コウセイド バイアス カイロ ニ ヨル パワー MOSFET ノ ON テイコウ アンテイカ ニ カンスル ケンキュウ"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-10","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"124","bibliographicPageStart":"117","bibliographicVolumeNumber":"33","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Power electronic devices are widely used in industries and commercial fields. Recently high-speed M0S devices\nhave been exchanged instead of SCR. In this paper, we design a bias circuit of a MOS switch with high accuracy. The circuit for stabilizing on-resistance of the MOS FET at input voltage 3 to 5 [V] and temperature -50 to 85\n[℃] is designed. The bias circuit consists of a CR oscillator, a charge pump circuit with the 4-time voltage and\na constant voltage circuit. A CR oscillator contains resistors, capacitors and a CMOS inverter. The oscillation\nfrequency is determined by the values of C and R. By using the oscillation frequency as a control clock, a\ncharge pump circuit with the 4-time voltage is operated as expected. Using the 4-time voltage of the charge\npump circuit, the constant voltage circuit holds the output voltage of 9.9 [V] without influence of the input\nvoltage and a room temperature. Finally, the designed MOS switch has a low and accurate on-resistance. Their\nperformances are verified using the HSPICE simulator with 0.5μm CMOS process device parameters.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"生島, 幸博","creatorNameLang":"ja"},{"creatorName":"イクシマ, ユキヒロ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"石川, 昭一郎","creatorNameLang":"ja"},{"creatorName":"イシカワ, ショウイチロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"淡野, 公一","creatorNameLang":"ja"},{"creatorName":"タンノ, コウイチ","creatorNameLang":"ja-Kana"},{"creatorName":"Tanno, Koichi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"石塚, 興彦","creatorNameLang":"ja"},{"creatorName":"イシズカ, オキヒコ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ikushima, Yukihiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ishikawa, Shouichirou","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ishizuka, Okihiko","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00002428232.pdf","filesize":[{"value":"885.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00002428232.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2986/files/KJ00002428232.pdf"},"version_id":"72dd230d-ea11-487b-949e-aca0a12a94c5"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"高精度バイアス回路によるパワーMOSFETのON抵抗安定化に関する研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"高精度バイアス回路によるパワーMOSFETのON抵抗安定化に関する研究","subitem_title_language":"ja"},{"subitem_title":"Stabilization for the ON-Resistance of a Power MOS FET using bias circuits with high accuracy","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","314"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2986","relation_version_is_last":true,"title":["高精度バイアス回路によるパワーMOSFETのON抵抗安定化に関する研究"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-07-30T00:14:30.497356+00:00"}