@article{oai:miyazaki-u.repo.nii.ac.jp:00002986,
 author = {生島, 幸博 and 石川, 昭一郎 and 淡野, 公一 and Tanno, Koichi and 石塚, 興彦 and Ikushima, Yukihiro and Ishikawa, Shouichirou and Ishizuka, Okihiko},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Oct},
 note = {Power electronic devices are widely used in industries and commercial fields. Recently high-speed M0S devices
have been exchanged instead of SCR. In this paper, we design a bias circuit of a MOS switch with high accuracy. The circuit for stabilizing on-resistance of the MOS FET at input voltage 3 to 5 [V] and temperature -50 to 85
[℃] is designed. The bias circuit consists of a CR oscillator, a charge pump circuit with the 4-time voltage and
a constant voltage circuit. A CR oscillator contains resistors, capacitors and a CMOS inverter. The oscillation
frequency is determined by the values of C and R. By using the oscillation frequency as a control clock, a
charge pump circuit with the 4-time voltage is operated as expected. Using the 4-time voltage of the charge
pump circuit, the constant voltage circuit holds the output voltage of 9.9 [V] without influence of the input
voltage and a room temperature. Finally, the designed MOS switch has a low and accurate on-resistance. Their
performances are verified using the HSPICE simulator with 0.5μm CMOS process device parameters.},
 pages = {117--124},
 title = {高精度バイアス回路によるパワーMOSFETのON抵抗安定化に関する研究},
 volume = {33},
 year = {2004},
 yomi = {イクシマ, ユキヒロ and イシカワ, ショウイチロウ and タンノ, コウイチ and イシズカ, オキヒコ}
}