{"created":"2023-05-15T09:58:55.570903+00:00","id":2985,"links":{},"metadata":{"_buckets":{"deposit":"b6d8df0d-9102-4284-b63b-1c50b475c5e8"},"_deposit":{"created_by":5,"id":"2985","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2985"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002985","sets":["73","73:36","73:36:330","73:36:330:313"]},"author_link":["15853","12260","15855","12265"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ゼンハンシャ リンカイカク キンボウ デノ Xセンカイセキホウ ニ ヨル シリコン ケッショウチュウ ノ ビショウ コウシワイ ノ カンサツ・ヒョウカ"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-07","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"38","bibliographicPageStart":"31","bibliographicVolumeNumber":"32","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Abstract \nAs dynamic random access memories and imaging devices continue to be made smaller, the \nquality of the silicon surfaces on which they are made becomes more and more important. The \nsurface damage introduced by mechanochemical polishing is reported as one of the causes that \ndegrade a device performance. For this reason, powerful characterization techniques for surface \ndamage are strongly required. As the one method, X-ray topography using extremely asymmetric \ndiffraction under the simultaneous diffraction condition is effective for imaging a minute strain field \nnear the surface. \nIn the present study, characterization of the minute strain field in silicon crystals with oxide film \nof 5nm and 25nm thick was performed using extremely asymmetrical X-ray diffraction of 311 \nreflection using the Berg-Barrett method and the double-crystal method. A series of X-ray \ntopographs were taken around the Bragg peak and off-Bragg angles on both sides of incident angle. \nThe reverse contrast was observed between topographs taken at strain field occurring at both sides of \noxide film of 5nm thick and surface defect images arising from the mechanochemical polishing were \nclearly visualized.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"坂元, 誠志","creatorNameLang":"ja"},{"creatorName":"サカモト, マサユキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"福森, 太一郎","creatorNameLang":"ja"},{"creatorName":"フクモリ, タイチロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sakamoto, Masayuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fukumori, Taichiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00002419420.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00002419420.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2985/files/KJ00002419420.pdf"},"version_id":"e85d5780-3473-4e86-bcf3-64381eceaa81"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"X-rays, Silicon oxide film, Asymmetric reflection, Minute strain field, Topography","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"全反射臨界角近傍でのX線回折法によるシリコン結晶中の微小格子歪の観察・評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"全反射臨界角近傍でのX線回折法によるシリコン結晶中の微小格子歪の観察・評価","subitem_title_language":"ja"},{"subitem_title":"Characterization of Minute Strain Field in Si Crystals by X-Ray Topography with a Glancing Angle Near the Critical Angle","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","313"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2985","relation_version_is_last":true,"title":["全反射臨界角近傍でのX線回折法によるシリコン結晶中の微小格子歪の観察・評価"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-07-30T00:14:24.448651+00:00"}