@article{oai:miyazaki-u.repo.nii.ac.jp:00002985,
 author = {坂元, 誠志 and 福森, 太一郎 and Sakamoto, Masayuki and Fukumori, Taichiro},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {Abstract 
As dynamic random access memories and imaging devices continue to be made smaller, the 
quality of the silicon surfaces on which they are made becomes more and more important. The 
surface damage introduced by mechanochemical polishing is reported as one of the causes that 
degrade a device performance. For this reason, powerful characterization techniques for surface 
damage are strongly required. As the one method, X-ray topography using extremely asymmetric 
diffraction under the simultaneous diffraction condition is effective for imaging a minute strain field 
near the surface. 
In the present study, characterization of the minute strain field in silicon crystals with oxide film 
of 5nm and 25nm thick was performed using extremely asymmetrical X-ray diffraction of 311 
reflection using the Berg-Barrett method and the double-crystal method. A series of X-ray 
topographs were taken around the Bragg peak and off-Bragg angles on both sides of incident angle. 
The reverse contrast was observed between topographs taken at strain field occurring at both sides of 
oxide film of 5nm thick and surface defect images arising from the mechanochemical polishing were 
clearly visualized.},
 pages = {31--38},
 title = {全反射臨界角近傍でのX線回折法によるシリコン結晶中の微小格子歪の観察・評価},
 volume = {32},
 year = {2003},
 yomi = {サカモト, マサユキ and フクモリ, タイチロウ}
}