{"created":"2023-05-15T09:58:55.408786+00:00","id":2982,"links":{},"metadata":{"_buckets":{"deposit":"7c201607-34cc-4968-a880-9faec1c82ba1"},"_deposit":{"created_by":9,"id":"2982","owner":"5","owners":[9],"pid":{"revision_id":0,"type":"depid","value":"2982"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002982","sets":["73","73:36","73:36:330","73:36:330:314"]},"author_link":["15829","12047","7289","7290","15825"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"フォト ルミネッセンス ブンコウホウ ニ ヨル III-Vゾク カゴウブツ ハンドウタイ InGaAlP ノ ヒョウカ"}]},"item_10002_biblio_info_7":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-10","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"105","bibliographicPageStart":"101","bibliographicVolumeNumber":"33","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Abstract \nInGaAIP light emitting diodes (LED ) are attractive visible light sources . The luminescent \ncharacterization of devices would change due to the diffusion of impurities into the active layer \nduring the device manufacturing processes. In this paper, we evaluated the as-grown and annealed \nLED samples by Photoluminescence (PL) spectroscopy. The main PL peak around 2.16 eV at 77 K \nfrom the band gap of the active layer was observed with the small peak assigned to the Zn accepter \nlevel. The PL intensity of the active layer abruptly increased with increasing the excitation light \nintensity nonlinearly at the certain excited intensity which depends on the samples. The phenomena \ncan be explained by the population inversion of the carrieres . We presented the relation of the PL \nintensity and the excited light power in the strong and weak excited region. The difference of the \nlifetime ratio between a radiative and a nonradiative recombination depended on the deep level of \nsamples. The PL measurement is good evaluation method to the degree of degradation of the LED \nin the nondestructive measurement.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"item_10002_source_id_11","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"河村, 昌和","creatorNameLang":"ja"},{"creatorName":"カワムラ, マサカズ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"15825","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"0000000106573887","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"https://isni.org/isni/0000000106573887"}],"affiliationNames":[{"affiliationName":"宮崎大学","affiliationNameLang":"ja"},{"affiliationName":"University of Miyazaki","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"前田, 幸治","creatorNameLang":"ja"},{"creatorName":"マエダ, コウジ","creatorNameLang":"ja-Kana"},{"creatorName":"Maeda, Koji","creatorNameLang":"en"}],"familyNames":[{"familyName":"前田","familyNameLang":"ja"},{"familyName":"マエダ","familyNameLang":"ja-Kana"},{"familyName":"Maeda","familyNameLang":"en"}],"givenNames":[{"givenName":"幸治","givenNameLang":"ja"},{"givenName":"コウジ","givenNameLang":"ja-Kana"},{"givenName":"Koji","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12047","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"50219268","nameIdentifierScheme":"e-Rad_Researcher","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=50219268"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"0000000106573887","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"https://isni.org/isni/0000000106573887"}],"affiliationNames":[{"affiliationName":"宮崎大学","affiliationNameLang":"ja"},{"affiliationName":"University of Miyazaki","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"福山, 敦彦","creatorNameLang":"ja"},{"creatorName":"フクヤマ, アツヒコ","creatorNameLang":"ja-Kana"},{"creatorName":"Fukuyama, Atsuhiko","creatorNameLang":"en"}],"familyNames":[{"familyName":"福山","familyNameLang":"ja"},{"familyName":"フクヤマ","familyNameLang":"ja-Kana"},{"familyName":"Fukuyama","familyNameLang":"en"}],"givenNames":[{"givenName":"敦彦","givenNameLang":"ja"},{"givenName":"アツヒコ","givenNameLang":"ja-Kana"},{"givenName":"Atsuhiko","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7289","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"10264368","nameIdentifierScheme":"e-Rad_Researcher","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=10264368"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"0000000106573887","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"https://isni.org/isni/0000000106573887"}],"affiliationNames":[{"affiliationName":"宮崎大学","affiliationNameLang":"ja"},{"affiliationName":"University of Miyazaki","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"},{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"}],"familyNames":[{"familyName":"碇","familyNameLang":"ja"},{"familyName":"イカリ","familyNameLang":"ja-Kana"},{"familyName":"Ikari","familyNameLang":"en"}],"givenNames":[{"givenName":"哲雄","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"},{"givenName":"Tetsuo","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7290","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"70113214","nameIdentifierScheme":"e-Rad_Researcher","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=70113214"}]},{"creatorNames":[{"creatorName":"Kawamura, Masakazu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"15829","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00002428229.pdf","filesize":[{"value":"441.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00002428229.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2982/files/KJ00002428229.pdf"},"version_id":"437c34ac-c327-41d3-a966-b93bb753a0a1"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"InGaAIP, LED, Photoluminescence, ASE, life time","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"フォトルミネッセンス分光法によるIII-V族化合物半導体InGaAlPの評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"フォトルミネッセンス分光法によるIII-V族化合物半導体InGaAlPの評価","subitem_title_language":"ja"},{"subitem_title":"Investigation of Optical Characterization in InGaAlP-LED by Using Photoluminescence Measurement","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"9","path":["73","36","330","314"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2982","relation_version_is_last":true,"title":["フォトルミネッセンス分光法によるIII-V族化合物半導体InGaAlPの評価"],"weko_creator_id":"9","weko_shared_id":-1},"updated":"2025-01-07T01:52:29.360476+00:00"}