{"created":"2023-05-15T09:58:55.279872+00:00","id":2980,"links":{},"metadata":{"_buckets":{"deposit":"e53c9ff1-b647-4bab-9573-373eb1ba7167"},"_deposit":{"created_by":5,"id":"2980","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2980"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002980","sets":["73","73:36","73:36:330","73:36:330:314"]},"author_link":["11920","15810"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"InAs and GaAs quantum dots grown by hyperthermal source beams"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-10","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"92","bibliographicPageStart":"87","bibliographicVolumeNumber":"33","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Abstract \nA growth method which uses group III (triisopropylindium and triisobutylgallium) and V \n(trisdimethylarsenic) metalorganic molecules with hyperthermal energies has been developed for the \ngrowth of GaAs and InAs quantum dots. It grows uniform quantum dots with an extremely high \ndensity of 1 x10(14乗) cm(-2乗), which cannot be attained using Stranski-Krastanov (S-K) growih mode. \nGaAs and InAs quantum dots grown by this technique show a sharp and strong emission peak in the \nphotoluminescence spectra, suggesting that the dots are very uniform in size and have good quality. \nIt is demonstrated that the growth mechanism is quite different from that of the S-K growth mode.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ozeki, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"11920","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shimizu, Yuichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"15810","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00002428227.pdf","filesize":[{"value":"498.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00002428227.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2980/files/KJ00002428227.pdf"},"version_id":"5f62562a-34d5-4e37-a27f-1926ea66b134"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Growth method, Chemical beam epitaxy, Semiconducting III-V materials","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"InAs and GaAs quantum dots grown by hyperthermal source beams","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"InAs and GaAs quantum dots grown by hyperthermal source beams","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","314"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-06-28"},"publish_date":"2007-06-28","publish_status":"0","recid":"2980","relation_version_is_last":true,"title":["InAs and GaAs quantum dots grown by hyperthermal source beams"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-07-30T05:16:47.551265+00:00"}