@article{oai:miyazaki-u.repo.nii.ac.jp:00002974,
 author = {椛島, 唯士 and 黒木, 正子 and Kuroki, Masako and 福森, 太一郎 and 明石, 義人 and Akashi, Yoshito and Kabashima, Tadashi and 黒木, 正子 and Kuroki, Masako and Fukumori, Taichiro},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {The pulse laser gettering, which is cleaner and more flexible processing, is investigated. The
gettering power of the pulse laser induced defects is investigated by ESCA and SEM equipped
with EDX. To examine the amount of Cu atoms at several depths in the wafers annealed at from
700°C to 1000°C after pulse laser irradiation, gettered amount of Cu is precisely mapped along
the depth. In the wafer annealed at 700°C, Cu atoms are gettered only at the depth of 300 μm
from the surface. The annealing at elevated temperatures decrease the amount of Cu at 300 μm
and increase the amount at the shallower and the deeper depths, especially the deeper. And it is
shown that the annealing at 1000°C can induce considerable gettering at the depth of 200 f1 m,
which may be favorable for the fabrication.},
 pages = {25--29},
 title = {パルスレーザー照射欠陥のゲッタリング能力評価},
 volume = {32},
 year = {2003},
 yomi = {カバシマ, タダシ and クロキ, マサコ and フクモリ, タイチロウ and アカシ, ヨシト and クロキ, マサコ}
}