{"created":"2023-05-15T09:58:51.218218+00:00","id":2893,"links":{},"metadata":{"_buckets":{"deposit":"599dea10-d56c-40e3-adcc-23bcb6c0a433"},"_deposit":{"created_by":9,"id":"2893","owner":"5","owners":[9],"pid":{"revision_id":0,"type":"depid","value":"2893"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002893","sets":["73","73:36","73:36:330","73:36:330:319"]},"author_link":["12047","15287","13738","15291","13733","15288"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"スパッタホウ ニヨル SiC:H ハクマク ノ コウガク・デンキトクセイ ニオケル コウシュウハ デンリョク イゾンセイ"}]},"item_10002_biblio_info_7":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-09-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"38","bibliographicPageStart":"31","bibliographicVolumeNumber":"38","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"SiC:H films have been deposited by reactive r.f. magnetron sputtering of Si target in hydrogen and methane (diluted by argon) gas mixtures. The effects of hydrogen partial pressme ratio R_H and r.f. power P on the structural, optical, and electrical properties of the films were investigated. With increasing R_H above 90%, a weak SiC (110) peak was observed by X-ray diffraction around 2 θ=60°. On the basis of this condition, the dependence of r.f power P was examined. As a result, it was found that mlcrocrystallization was enhanced by increasing r.f. power.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of 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Power Dependence on Optical and Electrical Properties of SiC:H Films Prepared by Magnetron Sputtering","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"9","path":["73","36","330","319"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-10-29"},"publish_date":"2009-10-29","publish_status":"0","recid":"2893","relation_version_is_last":true,"title":["スパッタ法によるSiC:H薄膜の光学・電気特性における高周波電力依存性"],"weko_creator_id":"9","weko_shared_id":-1},"updated":"2025-01-14T00:50:19.203242+00:00"}