@article{oai:miyazaki-u.repo.nii.ac.jp:00002893,
 author = {山脇, 翔太 and 齋藤, 順雄 and Saito, Nobuo and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 西岡, 賢祐 and Yamawaki, Shota and 齋藤, 順雄 and Saito, Nobuo and Nishioka, Kensuke},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Sep},
 note = {SiC:H films have been deposited by reactive r.f. magnetron sputtering of Si target in hydrogen and methane (diluted by argon) gas mixtures. The effects of hydrogen partial pressme ratio R_H and r.f. power P on the structural, optical, and electrical properties of the films were investigated. With increasing R_H above 90%, a weak SiC (110) peak was observed by X-ray diffraction around 2 θ=60°. On the basis of this condition, the dependence of r.f power P was examined. As a result, it was found that mlcrocrystallization was enhanced by increasing r.f. power.},
 pages = {31--38},
 title = {スパッタ法によるSiC:H薄膜の光学・電気特性における高周波電力依存性},
 volume = {38},
 year = {2009},
 yomi = {ヤマワキ, ショウタ and サイトウ, ノブオ and マエダ, コウジ and ニシオカ, ケンスケ and サイトウ, ノブオ}
}