{"created":"2023-05-15T09:58:50.999063+00:00","id":2888,"links":{},"metadata":{"_buckets":{"deposit":"c80d9ae0-0650-4ec7-b687-6d621f5e4c56"},"_deposit":{"created_by":5,"id":"2888","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2888"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002888","sets":["73","73:36","73:36:330","73:36:330:323"]},"author_link":["24421","14196","22140","7290","11920","28621","7289"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ゲンリョウ キョウキュウ シーケンス ノ チガイ ガ ゲンシソウ エピタキシーホウ ニヨル GaAsN ハクマク セイチョウ ニ アタエル エイキョウ"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"30","bibliographicPageStart":"27","bibliographicVolumeNumber":"42","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"GaAs(N) films have been grown on semi-insulating GaAs(001) substrate at substrate temperatures of 480, 500 and 520 °C by atomic layer epitaxy (ALE). We investigated the effects of gas flow sequences on self-limiting mechanism (SLM), N incorporation, and residual impurities as a first step to grow GaAsN on precisely controlled surface by ALE. N precursor molecules were supplied to Ga (On-Ga) and As terminated surfaces (On-As). The On-As case showed rough surface and their crystal qualities were not good. In On-Ga case, SLM functioned well in whole growth temperature region and On-Ga sample showed low density of residual impurities. These demonstrated that On-Ga sequence is effective to grow GaAsN thin films on precisely controlled surface by ALE technique.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"芳賀, 章博","creatorNameLang":"ja"},{"creatorName":"ハガ, アキヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Haga, Akihiro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"貞任, 萌","creatorNameLang":"ja"},{"creatorName":"サダト, ハジメ","creatorNameLang":"ja-Kana"},{"creatorName":"Sadato, Hajime","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"原口, 智宏","creatorNameLang":"ja"},{"creatorName":"ハラグチ, トモヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Haraguchi, Tomohiro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"鈴木, 秀俊","creatorNameLang":"ja"},{"creatorName":"スズキ, ヒデトシ","creatorNameLang":"ja-Kana"},{"creatorName":"Suzuki, Hidetoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Fukuyama, Atsuhiko","creatorNameLang":"en"},{"creatorName":"福山, 敦彦","creatorNameLang":"ja"},{"creatorName":"フクヤマ, アツヒコ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"尾関, 雅志","creatorNameLang":"ja"},{"creatorName":"オゼキ, マサシ","creatorNameLang":"ja-Kana"},{"creatorName":"Ozeki, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"},{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"芳賀, 章博","creatorNameLang":"ja"},{"creatorName":"ハガ, アキヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Haga, Akihiro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"貞任, 萌","creatorNameLang":"ja"},{"creatorName":"サダト, ハジメ","creatorNameLang":"ja-Kana"},{"creatorName":"Sadato, Hajime","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"原口, 智宏","creatorNameLang":"ja"},{"creatorName":"ハラグチ, トモヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Haraguchi, Tomohiro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"engineering27-30.pdf","filesize":[{"value":"781.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"engineering27-30.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2888/files/engineering27-30.pdf"},"version_id":"7cdb195f-c687-44b9-8bdb-88ac23d6842a"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Atomic Layer epitaxy, gas flow sequence, Gallium arsenide nitride, Residual Impurities, selflimiting mechanism","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"原料供給シーケンスの違いが原子層エピタキシー法によるGaAsN薄膜成長に与える影響","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"原料供給シーケンスの違いが原子層エピタキシー法によるGaAsN薄膜成長に与える影響","subitem_title_language":"ja"},{"subitem_title":"Effects of Gas Flow Sequence on GaAsN Films Grown by Atomic Layer Epitaxy","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","323"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2013-12-24"},"publish_date":"2013-12-24","publish_status":"0","recid":"2888","relation_version_is_last":true,"title":["原料供給シーケンスの違いが原子層エピタキシー法によるGaAsN薄膜成長に与える影響"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-11-17T01:49:36.836208+00:00"}