@article{oai:miyazaki-u.repo.nii.ac.jp:00002888,
 author = {芳賀, 章博 and Haga, Akihiro and 貞任, 萌 and Sadato, Hajime and 原口, 智宏 and Haraguchi, Tomohiro and 鈴木, 秀俊 and Suzuki, Hidetoshi and Fukuyama, Atsuhiko and 福山, 敦彦 and 尾関, 雅志 and Ozeki, Masashi and Ikari, Tetsuo and 碇, 哲雄 and 芳賀, 章博 and Haga, Akihiro and 貞任, 萌 and Sadato, Hajime and 原口, 智宏 and Haraguchi, Tomohiro},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {GaAs(N) films have been grown on semi-insulating GaAs(001) substrate at substrate temperatures of 480, 500 and 520 °C by atomic layer epitaxy (ALE). We investigated the effects of gas flow sequences on self-limiting mechanism (SLM), N incorporation, and residual impurities as a first step to grow GaAsN on precisely controlled surface by ALE. N precursor molecules were supplied to Ga (On-Ga) and As terminated surfaces (On-As). The On-As case showed rough surface and their crystal qualities were not good. In On-Ga case, SLM functioned well in whole growth temperature region and On-Ga sample showed low density of residual impurities. These demonstrated that On-Ga sequence is effective to grow GaAsN thin films on precisely controlled surface by ALE technique.},
 pages = {27--30},
 title = {原料供給シーケンスの違いが原子層エピタキシー法によるGaAsN薄膜成長に与える影響},
 volume = {42},
 year = {2013},
 yomi = {ハガ, アキヒロ and サダト, ハジメ and ハラグチ, トモヒロ and スズキ, ヒデトシ and フクヤマ, アツヒコ and オゼキ, マサシ and イカリ, テツオ and ハガ, アキヒロ and サダト, ハジメ and ハラグチ, トモヒロ}
}