@article{oai:miyazaki-u.repo.nii.ac.jp:00002879,
 author = {元田, 雄大郎 and 鈴木, 章生 and Suzuki, Akio and 大堀, 大介 and Ohori, Daisuke and Fukuyama, Atsuhiko and 福山, 敦彦 and 本田, 善央 and Honda, Yoshio and 山口, 雅史 and 天野, 浩 and Amano, Hiroshi and Ikari, Tetsuo and 碇, 哲雄 and Motoda, Yutaro and 鈴木, 章生 and Suzuki, Akio and 大堀, 大介 and Ohori, Daisuke and 本田, 善央 and Honda, Yoshio and Yamaguchi, Masahito and 天野, 浩 and Amano, Hiroshi},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Non-doped (1-101)GaN and C-doped (1-101)GaN thin film samples were grown by a selective metal-organic-vapor-phase-epitaxy (MOVPE) method on 8˚off-oriented (001) Si substrate. In This study, we identify the E_g of the GaN thin films on Si substrate by photoreflectance (PR) and photoluminescence (PL) methods. From the fitting analysis to the obtained PR spectrum, the estimated values of critical energy (E_cr) of GaN film grown on Si substrate were approximately 1 meV lower than expected values for strain-free GaN bulk sumple. Exciton peak positions of non-doped and C-doped (1-101)GaN grown on Si substrate corresponded exactly to strain-free GaN bulk sample. These experimental results implied that the strain caused by the lattice mismuch between GaN and Si were relaxed in the GaN surface resion.},
 pages = {23--26},
 title = {PR及びPL法によるシリコン基板上に成長させた窒化ガリウムの光学的特性に対する歪の影響},
 volume = {42},
 year = {2013},
 yomi = {モトダ, ユウタロウ and スズキ, アキオ and オオホリ, ダイスケ and フクヤマ, アツヒコ and ホンダ, ヨシオ and ヤマグチ, マサヒト and アマノ, ヒロシ and イカリ, テツオ and スズキ, アキオ and オオホリ, ダイスケ and ホンダ, ヨシオ and アマノ, ヒロシ}
}