{"created":"2023-05-15T09:58:50.202872+00:00","id":2870,"links":{},"metadata":{"_buckets":{"deposit":"65c6e45c-d016-40c3-8127-f9fd45d7afc8"},"_deposit":{"created_by":5,"id":"2870","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2870"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002870","sets":["73","73:36","73:36:330","73:36:330:323"]},"author_link":["14196","15155","7290","15150","24420","7289"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Si(111) ヒョウメン エノ IIIゾク キョウキュウ ニヨル GaAs ハクマクチュウ ノ カイテン ソウショウ ケイゲン"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"22","bibliographicPageStart":"19","bibliographicVolumeNumber":"42","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We tried to reduce the domain of rotational twin in GaAs layer grown on Si (111) substrate by pre-evaporation of group III atoms before the layer growth. Ga and In atoms were used as pre-evaporating materials. GaAs layers were grown by conventional molecular beam method under various V/III ratios. By Ga pre-evaporation method, the domain of rotational twin increased. In contrast, the twin domain decreased by In pre-evaporation method. We found that the In pre-evaporation method was effective at V/III ratios between 30 and 100.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"伊東, 大樹","creatorNameLang":"ja"},{"creatorName":"イトウ, ダイキ","creatorNameLang":"ja-Kana"},{"creatorName":"Ito, Daiki","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"太刀掛, 弘晃","creatorNameLang":"ja"},{"creatorName":"タチカケ, ヒロアキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"鈴木, 秀俊","creatorNameLang":"ja"},{"creatorName":"スズキ, ヒデトシ","creatorNameLang":"ja-Kana"},{"creatorName":"Suzuki, Hidetoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Fukuyama, Atsuhiko","creatorNameLang":"en"},{"creatorName":"福山, 敦彦","creatorNameLang":"ja"},{"creatorName":"フクヤマ, アツヒコ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"},{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"伊東, 大樹","creatorNameLang":"ja"},{"creatorName":"イトウ, ダイキ","creatorNameLang":"ja-Kana"},{"creatorName":"Ito, Daiki","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tachikake, Hiroaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"engineering19-22.pdf","filesize":[{"value":"727.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"engineering19-22.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2870/files/engineering19-22.pdf"},"version_id":"9d809a01-4d32-4f7f-b439-a66b7616b050"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Rotational twin formation in GaAs, GaAs on Si, molecular beam epitaxy, hetero-epitaxy","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Si(111)表面へのIII族供給によるGaAs薄膜中の回転双晶軽減","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Si(111)表面へのIII族供給によるGaAs薄膜中の回転双晶軽減","subitem_title_language":"ja"},{"subitem_title":"Reduction of Rotational Twin Formation in GaAs by Irradiation of Group III Atoms to Si (111) Substrate","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","323"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2013-12-24"},"publish_date":"2013-12-24","publish_status":"0","recid":"2870","relation_version_is_last":true,"title":["Si(111)表面へのIII族供給によるGaAs薄膜中の回転双晶軽減"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-11-17T02:01:03.075948+00:00"}