@article{oai:miyazaki-u.repo.nii.ac.jp:00002870,
 author = {伊東, 大樹 and Ito, Daiki and 太刀掛, 弘晃 and 鈴木, 秀俊 and Suzuki, Hidetoshi and Fukuyama, Atsuhiko and 福山, 敦彦 and Ikari, Tetsuo and 碇, 哲雄 and 伊東, 大樹 and Ito, Daiki and Tachikake, Hiroaki},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {We tried to reduce the domain of rotational twin in GaAs layer grown on Si (111) substrate by pre-evaporation of group III atoms before the layer growth. Ga and In atoms were used as pre-evaporating materials. GaAs layers were grown by conventional molecular beam method under various V/III ratios. By Ga pre-evaporation method, the domain of rotational twin increased. In contrast, the twin domain decreased by In pre-evaporation method. We found that the In pre-evaporation method was effective at V/III ratios between 30 and 100.},
 pages = {19--22},
 title = {Si(111)表面へのIII族供給によるGaAs薄膜中の回転双晶軽減},
 volume = {42},
 year = {2013},
 yomi = {イトウ, ダイキ and タチカケ, ヒロアキ and スズキ, ヒデトシ and フクヤマ, アツヒコ and イカリ, テツオ and イトウ, ダイキ}
}