{"created":"2023-05-15T09:58:49.195909+00:00","id":2847,"links":{},"metadata":{"_buckets":{"deposit":"28a37a2b-b517-43ff-aab6-ddb22b31ba4c"},"_deposit":{"created_by":5,"id":"2847","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2847"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002847","sets":["73","73:36","73:36:330","73:36:330:320"]},"author_link":["12061","13284","7290"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"カルコパイライトガタ ハンドウタイ AgGaSe2 ケッショウ ノ キンセイタイハバ ノ オンド イゾンセイ"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-09-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"89","bibliographicPageStart":"83","bibliographicVolumeNumber":"39","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"AgGaSe2 crystals were grown by Hot-Press method at 400～700℃ under 25 MPa for 1 hour. We measured temperature dependent X-ray diffraction (XRD) and photoluminescence (PL) of AgGaSe2 crystal provided at 700℃. Using each lattice constants calculated by XRD, it was found that a liner thermal expansion decreased for T<70 K. Due to band gap energy Eg increased for T<70 K, the Eg coefficient dEg/dT showed positive behavior. In the PL spectra, free exciton peaks showed to increase for T<70 K as well as the liner thermal expansion.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"永岡, 章","creatorNameLang":"ja"},{"creatorName":"ナガオカ, アキラ","creatorNameLang":"ja-Kana"},{"creatorName":"Nagaoka, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Yoshino, Kenji","creatorNameLang":"en"},{"creatorName":"吉野, 賢二","creatorNameLang":"ja"},{"creatorName":"ヨシノ, ケンジ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"},{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"engineering39-14.pdf","filesize":[{"value":"912.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"engineering39-14.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2847/files/engineering39-14.pdf"},"version_id":"a70b1e2c-1d42-4f5d-8a2a-8565e310f5ad"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"AgGaSe2, Liner thermal expansion, Hot-Press, Chalcopyrite","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"カルコパイライト型半導体AgGaSe2結晶の禁制帯幅の温度依存性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"カルコパイライト型半導体AgGaSe2結晶の禁制帯幅の温度依存性","subitem_title_language":"ja"},{"subitem_title":"Temperature Dependence of Bandgap Energy of AgGaSe2 Crystals","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","320"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2011-02-25"},"publish_date":"2011-02-25","publish_status":"0","recid":"2847","relation_version_is_last":true,"title":["カルコパイライト型半導体AgGaSe2結晶の禁制帯幅の温度依存性"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-09-02T13:31:36.760466+00:00"}