@article{oai:miyazaki-u.repo.nii.ac.jp:00002847,
 author = {永岡, 章 and Nagaoka, Akira and Yoshino, Kenji and 吉野, 賢二 and Ikari, Tetsuo and 碇, 哲雄},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Sep},
 note = {AgGaSe2 crystals were grown by Hot-Press method at 400～700℃ under 25 MPa for 1 hour. We measured temperature dependent X-ray diffraction (XRD) and photoluminescence (PL) of AgGaSe2 crystal provided at 700℃. Using each lattice constants calculated by XRD, it was found that a liner thermal expansion decreased for T<70 K. Due to band gap energy Eg increased for T<70 K, the Eg coefficient dEg/dT showed positive behavior. In the PL spectra, free exciton peaks showed to increase for T<70 K as well as the liner thermal expansion.},
 pages = {83--89},
 title = {カルコパイライト型半導体AgGaSe2結晶の禁制帯幅の温度依存性},
 volume = {39},
 year = {2010},
 yomi = {ナガオカ, アキラ and ヨシノ, ケンジ and イカリ, テツオ}
}