{"created":"2023-05-15T09:58:49.153764+00:00","id":2846,"links":{},"metadata":{"_buckets":{"deposit":"9875e78f-baa0-4fe4-a6f3-d74d79683d64"},"_deposit":{"created_by":5,"id":"2846","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2846"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002846","sets":["73","73:36","73:36:330","73:36:330:324"]},"author_link":["15075","12061"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"アニール コウカ ニヨル サンカ アエン ハクマク ノ テイ テイコウカ"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2014-07-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"91","bibliographicPageStart":"85","bibliographicVolumeNumber":"43","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Ga-doped ZnO thin films were grown on glass substrate by a conventional spray method at 150℃ using Diethyl zinc based solution. The Ga-doped ZnO thin films had a low sheet resistivity of 15.0Ω/sq. , a carrier concentration of 2.0×10^<20> cm^<-3> and mobility of 20.0 cm^2 (Vs)^<-1> at optimal Ga content of 2 at% upon hydrogen annealing at 450℃. It was assumed that an increase of the n-type carrier concentration is due to increase oxygen vacancies by reacting hydrogen and oxygen in ZnO from X-ray photoelectron spectroscopy results.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"井手, 亜貴子","creatorNameLang":"ja"},{"creatorName":"イデ, アキコ","creatorNameLang":"ja-Kana"},{"creatorName":"Ide, Akiko","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Yoshino, Kenji","creatorNameLang":"en"},{"creatorName":"吉野, 賢二","creatorNameLang":"ja"},{"creatorName":"ヨシノ, ケンジ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"井手, 亜貴子","creatorNameLang":"ja"},{"creatorName":"イデ, アキコ","creatorNameLang":"ja-Kana"},{"creatorName":"Ide, Akiko","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"engineering43_85-91.pdf","filesize":[{"value":"1.6 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"engineering43_85-91.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2846/files/engineering43_85-91.pdf"},"version_id":"08fb151a-8271-4144-beb6-499ffb207b1b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ZnO, TCO, diethyl zinc(DEZ)","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"アニール効果による酸化亜鉛薄膜の低抵抗化","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"アニール効果による酸化亜鉛薄膜の低抵抗化","subitem_title_language":"ja"},{"subitem_title":"Annealing Effects on Impurities-Doped ZnO Films by Spray Method","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","324"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2014-09-04"},"publish_date":"2014-09-04","publish_status":"0","recid":"2846","relation_version_is_last":true,"title":["アニール効果による酸化亜鉛薄膜の低抵抗化"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-11-20T05:31:32.697491+00:00"}