@article{oai:miyazaki-u.repo.nii.ac.jp:00002846,
 author = {井手, 亜貴子 and Ide, Akiko and Yoshino, Kenji and 吉野, 賢二 and 井手, 亜貴子 and Ide, Akiko},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {Ga-doped ZnO thin films were grown on glass substrate by a conventional spray method at 150℃ using Diethyl zinc based solution. The Ga-doped ZnO thin films had a low sheet resistivity of 15.0Ω/sq. , a carrier concentration of 2.0×10^<20> cm^<-3> and mobility of 20.0 cm^2 (Vs)^<-1> at optimal Ga content of 2 at% upon hydrogen annealing at 450℃. It was assumed that an increase of the n-type carrier concentration is due to increase oxygen vacancies by reacting hydrogen and oxygen in ZnO from X-ray photoelectron spectroscopy results.},
 pages = {85--91},
 title = {アニール効果による酸化亜鉛薄膜の低抵抗化},
 volume = {43},
 year = {2014},
 yomi = {イデ, アキコ and ヨシノ, ケンジ and イデ, アキコ}
}