@article{oai:miyazaki-u.repo.nii.ac.jp:00002837,
 author = {持原, 晶子 and Mochihara, Akiko and Yoshino, Kenji and 吉野, 賢二 and 川野, 美延 and Kawano, Minobu and 尾込, 裕平 and 沈, 青 and 豊田, 太郎 and Toyoda, Taro and 早瀬, 修二 and Pandey, Shyam S. and 持原, 晶子 and Mochihara, Akiko and 川野, 美延 and Kawano, Minobu and Ogomi, Yuhei and Pandey, Shyam S. and Shen, Qing and 豊田, 太郎 and Toyoda, Taro and Hayase, Shuzi},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {Cu–III–VI_2 compounds have attracted considerable interest because of their possible photovoltaic applications. The ternary semiconductor copper indium sulfide (CuInS_2) is one of the promising materials for thin film solar cells because its bandgap energy of 1.5 eV and the absorption coefficient of 10^5 cm^<-1>. CuInS_2 thin film on glass substrate is grown by dipping-coat from Cu- and In-xanthate solution as precursor materials. X-ray diffraction pattern indicated that peaks of CuInS_2 (112) are observed at 150℃. This temperature is lowest in non-vacuum process of CuInS_2 film. The all CuInS_2 films are p-type conductivity by thermo prove analysis because Cu atom in In site defects are dominant in the samples from EPMA results.},
 pages = {81--84},
 title = {キサントゲン酸金属塩を用いた非真空プロセスによるCuInS_2薄膜の作製},
 volume = {43},
 year = {2014},
 yomi = {モチハラ, アキコ and ヨシノ, ケンジ and カワノ, ミノブ and オゴミ, ユウヘイ and Pandey, Shyam S. and トヨダ, タロウ and ハヤセ, シュウジ and モチハラ, アキコ and カワノ, ミノブ and トヨダ, タロウ}
}