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We studied physical property of IrSnOx thin films were deposited onto glass substrate by reactive R.F. sputtering using 2 kinds of SnO2 and Ir targets. Substrate temperature was ranging from room-temperature to 200 ℃. X-ray diffraction pattern indicated crystallization at 100 ℃, and identified IrSnO2 thin films as tetragonal rutile type structure. It was assumed that the changing valence of IrOx could be enhanced to a transmittance and electrical resistivity.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of 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F. sputtering","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"RFスパッタ法により作成したIrSnO2薄膜の基板温度依存性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"RFスパッタ法により作成したIrSnO2薄膜の基板温度依存性","subitem_title_language":"ja"},{"subitem_title":"Effects of Substrate Temperature of IrSnO2 Films Prepared by R. F. Sputtering","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","320"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2011-02-25"},"publish_date":"2011-02-25","publish_status":"0","recid":"2830","relation_version_is_last":true,"title":["RFスパッタ法により作成したIrSnO2薄膜の基板温度依存性"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2025-01-09T06:00:30.858738+00:00"}