{"created":"2023-05-15T12:12:34.599751+00:00","links":{},"metadata":{"_buckets":{"deposit":"4719bd56-e6b8-404b-9647-fe7958adba5d"},"_deposit":{"id":"2823.1","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"2823.1"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002823.1","sets":["73","73:36","73:36:330:322"]},"author_link":["14872","7152","7150"],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012-07-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"34","bibliographicPageStart":"29","bibliographicVolumeNumber":"41","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In this paper, offset-free and wide-input-range voltage followers are presented. The conventional voltage follower has two disadvantages; narrow input range and offset voltage. In this paper, these problems are solved. The former problem is modified by adding two MOSFETs in the diode-connecting path. The latter problem is modified by using depletion MOSFETs or floating-gate MOSFETs (FG-MOSFETs). Using these devices, the threshold voltage can be eliminated. The circuits are simulated in a 0.25 μm CMOS process. Simulation results demonstrate that input range of the proposed circuit is 48.9% wider than the conventional one. Depletion MOSFETs and FG-MOSFETs are used in the proposed circuit to decrease the offset voltage drastically. The depletion MOSFETs and FG-MOSFETs decrease the offset voltage drastically. The input ranges of the depletion MOSFETs scheme and FG-MOSFETs scheme are enlarged 54.5% and 140.6% respectively from the conventional one. In the FG-MOSFETs implementation, the output voltage is almost similar with the theoretical one and the gain is ≈ 0.5.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Abidin, Zainul","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14872","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tanno, Koichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7152","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"50260740","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=50260740"}]},{"creatorNames":[{"creatorName":"Tamura, Hiroki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7150","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"90334713","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=90334713"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"engineering41_29-34.pdf","filesize":[{"value":"759.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"engineering41_29-34.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2823.1/files/engineering41_29-34.pdf"},"version_id":"b7f8bf01-93b0-4fc2-912d-c9540d7ab349"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Voltage Follower, Flipped Voltage Follower, Wide Input Range, Offset Voltage, Analog Circuits","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Offset-Free Wide-Input-Range Flipped Voltage Followers Using Depletion MOSFETs and FG-MOSFETs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Offset-Free Wide-Input-Range Flipped Voltage Followers Using Depletion MOSFETs and FG-MOSFETs","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"2","path":["36","73","322"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-10-25"},"publish_date":"2012-10-25","publish_status":"0","recid":"2823.1","relation_version_is_last":true,"title":["Offset-Free Wide-Input-Range Flipped Voltage Followers Using Depletion MOSFETs and FG-MOSFETs"],"weko_creator_id":"2","weko_shared_id":2},"updated":"2023-07-29T11:18:15.764761+00:00"}