@article{oai:miyazaki-u.repo.nii.ac.jp:00002822,
 author = {田代, 龍一 and Tashiro, Ryuichi and Yoshino, Kenji and 吉野, 賢二 and Ikari, Tetsuo and 碇, 哲雄 and 田代, 龍一 and Tashiro, Ryuichi},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {Undoped CuInTe2 crystals were grown by hot-press (HP) method at 400 ～ 700℃ for 1 h under high pressure (10 ～ 40 MPa). One of the advantages of the HP method is that a crystal growth is easy at low temperature. The sizes of the samples were 20 mm in diameter. All samples indicated chalcopyrite structures, nearly stoichiometry and p-type by means of X-ray diffraction, electron probe microanalysis and thermoprobe analysis, respectively. However, the sample grown at 400℃ had a secondary phase. According to increasing temperature, the sample did not have the secondary phase. A single phase CuInTe2 crystal could be successfully obtained at 600℃. This temperature was lower than the melting point.},
 pages = {65--70},
 title = {ホットプレス法により作製したCuInTe2の成長温度依存性},
 volume = {40},
 year = {2011},
 yomi = {タシロ, リュウイチ and ヨシノ, ケンジ and イカリ, テツオ and タシロ, リュウイチ}
}