{"created":"2023-05-15T09:58:47.907411+00:00","id":2820,"links":{},"metadata":{"_buckets":{"deposit":"74774368-1d02-4802-9544-26c0b6665a27"},"_deposit":{"created_by":5,"id":"2820","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2820"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002820","sets":["73","73:36","73:36:330","73:36:330:320"]},"author_link":["7290","12061","15487"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"イオンプレーティングホウ ニヨリ サクセイ シタ Ga-doped ZnO ハクマク ノ ネツショリ コウカ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-09-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"70","bibliographicPageStart":"65","bibliographicVolumeNumber":"39","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Transparent conducting Ga-doped ZnO (GZO) thin films were deposited on glass substrates by ion-plating method. The GZO films were annealed under O2 atmosphere at from 100℃ to 500℃. The samples prepared were identified as polycrystalline ZnO with hexagonal wurtzite structure, which was determined from consentience with XRD peaks and lattice constants of a JCPDS file. Both as-grown and annealed samples were oriented c-axis. Z-Max values of AFM measurement were decreased as increasing the annealed temperature. This showed that the surface roughness of the annealed films was decreased. The reason indicated that excess oxygen atoms were introduced into the films.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"竹元, 裕仁","creatorNameLang":"ja"},{"creatorName":"タケモト, 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kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"engineering39-11.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2820/files/engineering39-11.pdf"},"version_id":"819cf91d-ea2d-4b31-8d92-62c1c8179ad0"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ZnO, TCO, ion-plating, annealing","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"イオンプレーティング法により作成した Ga-doped ZnO 薄膜の熱処理効果","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"イオンプレーティング法により作成した Ga-doped ZnO 薄膜の熱処理効果","subitem_title_language":"ja"},{"subitem_title":"Annealing Effects of Ga-doped ZnO Films Grown by a Ion-plating Deposition","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","320"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2011-02-25"},"publish_date":"2011-02-25","publish_status":"0","recid":"2820","relation_version_is_last":true,"title":["イオンプレーティング法により作成した Ga-doped ZnO 薄膜の熱処理効果"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2025-01-09T06:00:40.325337+00:00"}