@article{oai:miyazaki-u.repo.nii.ac.jp:00002812,
 author = {永岡, 章 and Nagaoka, Akira and Yoshino, Kenji and 吉野, 賢二 and Ikari, Tetsuo and 碇, 哲雄},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {CuInS2 single crystals were grown by a traveling heater method, which is one of the solution growth techniques. Temperature dependent X-ray diffraction of the CuInS2 was carried out between 10 and 300 K. A lattice constant of a-axis decreased and that of c-axis increased with increasing temperature. A linear thermal expansion of a-axis calculated from the lattice constants showed negative value. It was assumed that decreasing the linear thermal expansion indicated one of the factors of increasing bandgap at low temperature.},
 pages = {61--64},
 title = {I-III-VI2族化合物半導体CuInS2の異方性を持つ物性値の解析},
 volume = {40},
 year = {2011},
 yomi = {ナガオカ, アキラ and ヨシノ, ケンジ and イカリ, テツオ}
}