{"created":"2023-05-15T10:57:19.106775+00:00","links":{},"metadata":{"_buckets":{"deposit":"772f7de8-3f12-475b-a23d-f69bcc38bbee"},"_deposit":{"id":"2812.1","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"2812.1"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002812.1","sets":["73","73:36","73:36:330:321"]},"author_link":["13284","12061","7290"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"I-III-VI2 ゾク カゴウブツ ハンドウタイ CuInS2 ノ イホウセイ オ モツ ブッセイチ ノ カイセキ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-07-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"64","bibliographicPageStart":"61","bibliographicVolumeNumber":"40","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"CuInS2 single crystals were grown by a traveling heater method, which is one of the solution growth techniques. Temperature dependent X-ray diffraction of the CuInS2 was carried out between 10 and 300 K. A lattice constant of a-axis decreased and that of c-axis increased with increasing temperature. A linear thermal expansion of a-axis calculated from the lattice constants showed negative value. It was assumed that decreasing the linear thermal expansion indicated one of the factors of increasing bandgap at low temperature.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"永岡, 章","creatorNameLang":"ja"},{"creatorName":"ナガオカ, アキラ","creatorNameLang":"ja-Kana"},{"creatorName":"Nagaoka, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"吉野, 賢二"},{"creatorName":"ヨシノ, ケンジ","creatorNameLang":"ja-Kana"},{"creatorName":"Yoshino, Kenji","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"},{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"12engineering40_pp.61-64.pdf","filesize":[{"value":"451.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"12engineering40_pp.61-64.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2812.1/files/12engineering40_pp.61-64.pdf"},"version_id":"063a8286-aa25-4f79-8af5-53de5d0a6f71"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Chalcopyrite semiconductors, Traveling heater method, Linear thermal expansion, XRD","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"I-III-VI2族化合物半導体CuInS2の異方性を持つ物性値の解析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"I-III-VI2族化合物半導体CuInS2の異方性を持つ物性値の解析","subitem_title_language":"ja"},{"subitem_title":"Analysis of anisotropic properties of I-III-VI2 compound semiconductor CuInS2","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"2","path":["36","73","321"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-03-09"},"publish_date":"2012-03-09","publish_status":"0","recid":"2812.1","relation_version_is_last":true,"title":["I-III-VI2族化合物半導体CuInS2の異方性を持つ物性値の解析"],"weko_creator_id":"2","weko_shared_id":2},"updated":"2023-07-29T11:12:49.162794+00:00"}