@article{oai:miyazaki-u.repo.nii.ac.jp:00002805,
 author = {中島, 敏之 and Nakashima, Toshiyuki and 米岡, 将士 and 角田, 功 and 高倉, 健一郎 and 大山, 英典 and 中, 庸行 and Yoshino, Kenji and 吉野, 賢二 and Simoen, Eddy and Claeys, Cor and 中島, 敏之 and Nakashima, Toshiyuki and Yoneoka, Masashi and Tsunoda, Isao and Takakura, Kenichiro and Ohyama, Hidenori and Naka, Nobuyuki and Simoen, Eddy and Claeys, Cor},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {We have investigated the stress behavior in electron irradiated B-doped Si_<0.75>Ge_<0.25> / Si-substrate hetero-junctions by using Raman spectroscopy. For a high fluence (～1x10^<18> e/cm^2), the Raman peak of the Si-Si bond at the boron-doped Si_<0.75>Ge_<0.25> layer have a tendency to move toward the high wave number side. The tendency increases with increasing electron fluence. This could be explained by the local compressive stress variations in the Si_<0.75>Ge_<0.25> layer during irradiation with varying fluence, due to the difference in the generation probability of the knock-on atoms for Si, Ge and B.},
 pages = {103--107},
 title = {電子線照射したSi_<0.75>Ge_<0.25>/Siダイオードのラマン分光法によるひずみ解析},
 volume = {42},
 year = {2013},
 yomi = {ナカシマ, トシユキ and ヨネオカ, マサシ and ツノダ, イサオ and タカクラ, ケンイチロウ and オオヤマ, ヒデノリ and ナカ, ノブユキ and ヨシノ, ケンジ and ナカシマ, トシユキ}
}