@article{oai:miyazaki-u.repo.nii.ac.jp:00002793,
 author = {小嶋, 稔 and Oshima, Minoru and Yoshino, Kenji and 吉野, 賢二 and Ikari, Tetsuo and 碇, 哲雄 and 小嶋, 稔 and Oshima, Minoru},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {The dissociation energy of each SnO_2 (110), (101) and (200) surfaces have been investigated by using a molecular orbitals (MO) calculation, and compared with experimental data of XRD and SEM images. From the MO calculation results, the dissociation energy determined (200) > (101) > (110) surfaces. The highest dissociation energy was obtained the (200) surface. As a result, the (200) plane dominantly grew up with increasing film thickness and the calculation results for strength of dissociation energy indicated in good agreement with experimental data.},
 pages = {95--102},
 title = {スプレー熱分解法によるSnO_2系透明導電膜の成長メカニズムの解明},
 volume = {42},
 year = {2013},
 yomi = {オシマ, ミノル and ヨシノ, ケンジ and イカリ, テツオ and オシマ, ミノル}
}