{"created":"2023-05-15T09:58:46.487327+00:00","id":2789,"links":{},"metadata":{"_buckets":{"deposit":"9bb04d11-cbdf-41d8-85ae-3c18c0c0ede5"},"_deposit":{"created_by":5,"id":"2789","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2789"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002789","sets":["73","73:36","73:36:330","73:36:330:321"]},"author_link":["23996","14657","7290","12061"],"item_10002_alternative_title_1":{"attribute_name":"その他(別言語等)のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"I-III-VI2 ゾク カゴウブツ ハンドウタイ ノ AgInS2 ノ デンキテキ コウガクテキ トクセイ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-07-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"54","bibliographicPageStart":"49","bibliographicVolumeNumber":"40","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"AgInS2 crystals with changing Ag/In ratio were grown by a Hot-Press method at 700℃ under 25 MPa for 1 hour. The samples were evaluated X-ray diffraction (XRD), density measurement, electron probe micro analysis, Hall measurements, and photoluminescence. From the XRD spectra, chalcopyrite and orthorhombic type of all samples was confirmed AgInS2 peak. From the Hall measurement, all samples indicated n-type conductivity. It was deduced that lattice defects of sulphur vacancy was much existed in both Ag- and In-rich samples. From the photoluminescence, a free exciton emission was observed in both chalcopyrite and orthorhombic AgInS2 crystal.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"徳田, 剛大","creatorNameLang":"ja"},{"creatorName":"トクダ, 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kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"10engineering40_pp.49-54.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2789/files/10engineering40_pp.49-54.pdf"},"version_id":"82b0bf64-017b-414c-9483-064b567bf0b8"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"AgInS2, Chalcopyrite structure, Hot-press method","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"I-III-VI_2族化合物半導体のAgInS2の電気的、光学的特性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"I-III-VI_2族化合物半導体のAgInS2の電気的、光学的特性","subitem_title_language":"ja"},{"subitem_title":"Electrical and optical properties of AgInS2 with I-III-VI2 compound semiconductor","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","321"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-03-08"},"publish_date":"2012-03-08","publish_status":"0","recid":"2789","relation_version_is_last":true,"title":["I-III-VI_2族化合物半導体のAgInS2の電気的、光学的特性"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2025-01-09T06:00:31.382301+00:00"}