@article{oai:miyazaki-u.repo.nii.ac.jp:00002770,
 author = {松下, 卓哉 and 高比良, 潤 and Takahira, Jun and 境, 健太郎 and Sakai, Kentarou and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 鈴木, 秀俊 and Suzuki, Hidetoshi and Matsushita, Takuya and 高比良, 潤 and Takahira, Jun},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Distribution of misfit dislocations (MDs) formed at the interface of InGaAs/GaAs(001) structure with different InGaAs thickness was investigated by X-ray reciprocal space mapping (RSM) techniques. Satellite peaks (Ps) were observed at the side of InGaAs 004 Bragg peak in RSM. Ps peaks were originated from scattering by lattices deformed by MDs. Peak position and full width at half maximum of Ps represented the mean tilt angle of crystal lattices caused by MDs and variation of them. These results were agreement with the results of X-ray topography. Based on these results, the same analysis were performed on the films with different In composition.},
 pages = {85--88},
 title = {逆格子マッピングによる成長初期のInGaAs/GaAs(001)界面のミスフィット転位の解析},
 volume = {42},
 year = {2013},
 yomi = {マツシタ, タクヤ and タカヒラ, ジン and サカイ, ケンタロウ and マエダ, コウジ and スズキ, ヒデトシ and タカヒラ, ジン}
}