{"created":"2023-05-15T09:58:45.060702+00:00","id":2766,"links":{},"metadata":{"_buckets":{"deposit":"a9fefe48-86cb-41ec-b368-572bf9b6a599"},"_deposit":{"created_by":9,"id":"2766","owner":"5","owners":[9],"pid":{"revision_id":0,"type":"depid","value":"2766"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002766","sets":["73","73:36","73:36:330","73:36:330:321"]},"author_link":["12634","14511","7290","12047","22164","14516","14520"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"サマリウム オ テンカ シタ バリウム リュウカブツ ノ ヒカリ オヨビ Xセン レイキ ニヨル ハッコウ トクセイ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-07-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"43","bibliographicPageStart":"39","bibliographicVolumeNumber":"40","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"New X-ray scintillating phosphor materials whose compositions are based on Sm-doped chalcogenides have been investigated. Ga-Ge-S (GGS) and Ga-Ba-S (GBS) glass-ceramics prepared by melt quenching or slow cooling techniques. Uniform samples in GBS system could be made from BaS and Ga2S3 compounds with slow cooling rate from 1150℃. The photoluminescence emissions at 565, 600, and 650 nm bands were identified and attributed to transitions from 4G5/2 to 6H5/2, 6H7/2, and 6H9/2 respectively in Sm3+. The PL intensity from GBS materials is stronger than that from GGS glasses doped with Sm3+. The X-ray luminescence (XL) from Sm3+ ions could be detected only from the BGS ceramic samples excited from Cu target X-ray (40kV, 200 mA power). The XL could mainly observed in crystalline BaS and Ba2S3.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of 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