{"created":"2023-05-15T09:58:44.973929+00:00","id":2764,"links":{},"metadata":{"_buckets":{"deposit":"7532507c-6c0b-4d74-b88f-79b3f02538f1"},"_deposit":{"created_by":5,"id":"2764","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2764"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002764","sets":["73","73:36","73:36:330","73:36:330:320"]},"author_link":["14502","14499","7290","7289"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"N テンカ ニヨル GaAsN ハクマク ノ バンド コウゾウ ヘンカ ト バンド ハンコウサ モデル ノ ヒカク","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-09-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"33","bibliographicPageStart":"29","bibliographicVolumeNumber":"39","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The temperature dependence of the band gap energy estimated from the photorefrectance (PR) spectrum of GaAsN film grown on GaAs substrate was studied and compared with the band anti-crossing (BAC) model. At room temperature, band gaps were good agreement with predictions of BAC model. At low temperatures, however, band gaps followed a slightly-different temperature dependence, being lower in energy than that of BAC model. Good fit was obtained when we assumed that the temperature dependence of the energy of the Nitrogen level, -dEN/dT was not constant.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"牟田口, 和真","creatorNameLang":"ja"},{"creatorName":"ムタグチ, カズマサ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"14499","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"0000000106573887","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"https://isni.org/isni/0000000106573887"}],"affiliationNames":[{"affiliationName":"宮崎大学","affiliationNameLang":"ja"},{"affiliationName":"University of Miyazaki","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"福山, 敦彦","creatorNameLang":"ja"},{"creatorName":"フクヤマ, アツヒコ","creatorNameLang":"ja-Kana"},{"creatorName":"Fukuyama, Atsuhiko","creatorNameLang":"en"}],"familyNames":[{"familyName":"福山","familyNameLang":"ja"},{"familyName":"フクヤマ","familyNameLang":"ja-Kana"},{"familyName":"Fukuyama","familyNameLang":"en"}],"givenNames":[{"givenName":"敦彦","givenNameLang":"ja"},{"givenName":"アツヒコ","givenNameLang":"ja-Kana"},{"givenName":"Atsuhiko","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7289","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"10264368","nameIdentifierScheme":"e-Rad_Researcher","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=10264368"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"0000000106573887","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"https://isni.org/isni/0000000106573887"}],"affiliationNames":[{"affiliationName":"宮崎大学","affiliationNameLang":"ja"},{"affiliationName":"University of Miyazaki","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"},{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"}],"familyNames":[{"familyName":"碇","familyNameLang":"ja"},{"familyName":"イカリ","familyNameLang":"ja-Kana"},{"familyName":"Ikari","familyNameLang":"en"}],"givenNames":[{"givenName":"哲雄","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"},{"givenName":"Tetsuo","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"7290","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"70113214","nameIdentifierScheme":"e-Rad_Researcher","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=70113214"}]},{"creatorNames":[{"creatorName":"Mutaguchi, Kazumasa","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14502","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"engineering39-06.pdf","filesize":[{"value":"653.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"engineering39-06.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2764/files/engineering39-06.pdf"},"version_id":"31789af0-02d2-446c-970d-d1535ca8460d"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"GaAsN, Four-Junction Solar Cells, Photoreflectance spectroscopy, Band anti-crossing model","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"N添加によるGaAsN薄膜のバンド構造変化とバンド反交差モデルの比較","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"N添加によるGaAsN薄膜のバンド構造変化とバンド反交差モデルの比較","subitem_title_language":"ja"},{"subitem_title":"Comparison of the Band Structure Change by the Nitrogen Content in GaAsN Film with the BAC Model","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","320"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2011-02-25"},"publish_date":"2011-02-25","publish_status":"0","recid":"2764","relation_version_is_last":true,"title":["N添加によるGaAsN薄膜のバンド構造変化とバンド反交差モデルの比較"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2025-01-07T01:52:37.462394+00:00"}