@article{oai:miyazaki-u.repo.nii.ac.jp:00002756,
 author = {筒井, 康吉 and 正木, 宏和 and Masaki, Hirokazu and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 境, 健太郎 and Sakai, Kentaro and 尾関, 雅志 and Ozeki, Masashi and Tsutsui, Yasuyoshi and 正木, 宏和 and Masaki, Hirokazu},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {The strain of the Cal-xSrxF2 layers on GaAs grown by molecular beam epitaxy (MBE) has been investigated. The layers are analyzed using the high resolution X-ray diffraction (HRXRD). The in-plane and out-of-plane lattice parameters using reciprocal lattice mapping for the symmetric (004) and asymmetric (224) reciprocal lattice points. The reciprocal lattice points was broaden in all Ca1-xSrxF2 films despite the lattice matched film to the substrate. The lattice spacings of the film increased as the SrF_2 cell temperature increased. The correlation between the difference of the lattice constant in films and that in substrate and the degree of relaxation of the lattice in the films are found.},
 pages = {35--38},
 title = {高分解能X線回折法によるGaAs(001)上のフッ化物混晶膜の結晶評価},
 volume = {40},
 year = {2011},
 yomi = {ツツイ, ヤスヨシ and マサキ, ヒロカズ and マエダ, コウジ and サカイ, ケンタロウ and オゼキ, マサシ and マサキ, ヒロカズ}
}