@article{oai:miyazaki-u.repo.nii.ac.jp:00002743,
 author = {田村, 仁 and Tamura, Hitoshi and 萱岐, 俊洋 and 境, 貴洋 and Fukuyama, Atsuhiko and 福山, 敦彦 and Ikari, Tetsuo and 碇, 哲雄 and 田村, 仁 and Tamura, Hitoshi and Iki, Toshihiro and Sakai, Kentaro},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Sep},
 note = {It is important to control the carrier dynamics at p-n junction interface for high efficiency solar cells. In this study, the signal generation mechanisms of the Surface Photo-Voltage (SPV) and Piezoelectric Photo-Thermal (PPT) signals of Si p-n junction have investigated by using the photoexcited-carrier-concentration controlled incident light. Since the carrier accumulation (= SPV) and the recombination phenomenon (= PPT) are complementary, SPV and PPT should shows a peak and a dip, respectively. However, at hv = 1.30 eV, both SPV and PPT showed peaks. This was concluded that the PPT increased by a thermodynamic energy loss with phonon emitting within the conduction and valence bands.},
 pages = {15--18},
 title = {光励起キャリア数を制御した圧電素子光熱変換分光法による半導体p-n接合界面の研究},
 volume = {39},
 year = {2010},
 yomi = {タムラ, ヒトシ and イキ, トシヒロ and サカイ, タカヒロ and フクヤマ, アツヒコ and イカリ, テツオ and タムラ, ヒトシ}
}