@article{oai:miyazaki-u.repo.nii.ac.jp:00002726,
 author = {和田, 翔樹 and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 西岡, 賢祐 and Wada, Syoki and Nishioka, Kensuke},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {Structural analyses on microcrystalline silicon (μc-Si) films for thin film silicon solar cell applications prepared by plasma CVD method were studied. The crystallinity of μc-Si films were determined by the intensity ratio in the amorphous Si (a-Si) and crystalline Si (c-Si) peak of the Raman spectrum excited from four kinds of wavelength lasers which have the different penetration depth. We could nondestructively detect that the crystallinity of the films were increased as closing upon the front surface. In addition, we tried to calculate the Raman intensity ratio of a-Si and c-Si using a simple structural model of μc-Si. In the high crystallinity the results of observed crystallinity from Raman spectra are consistent with the calculation from the model, but in the low crystallinity these are not consistent with that from our model yet.},
 pages = {161--165},
 title = {複数の励起光を用いたラマン分光法による微結晶シリコン薄膜の評価},
 volume = {41},
 year = {2012},
 yomi = {ワダ, ショウキ and マエダ, コウジ and ニシオカ, ケンスケ}
}