{"created":"2023-05-15T09:58:42.506514+00:00","id":2716,"links":{},"metadata":{"_buckets":{"deposit":"eec1c8ae-caf4-4884-838e-5460ffaf6ae7"},"_deposit":{"created_by":9,"id":"2716","owner":"5","owners":[9],"pid":{"revision_id":0,"type":"depid","value":"2716"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002716","sets":["73","73:36","73:36:330","73:36:330:322"]},"author_link":["12634","12044","14444","12047","14196","11920"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"コウブンカイノウ Xセン カイセキホウ ニヨル GaAs キバンジョウ ノ フッカブツ ハクマク ケッショウ ノ ヒョウカ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012-07-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"159","bibliographicPageStart":"155","bibliographicVolumeNumber":"41","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The crystal structure of Ca_1-xSr_xF_2 films (x =0.3~0.7) grown on GaAs(001) by molecular beam epitaxy was studied. The composition of Ca_1-xSr_xF_2 film was changed by SrF_2 cells temperature. The film thickness were 100 to 300 nm. The lattice constants of <001> and <110> direction of the films were determined by rocking curve measurement, the (004) and (224) reciprocal lattice maps by the high resolution X-ray diffractometry. The lattice constants of both directions increased as the SrF_2 composition increasing. The lattice constant of the films which was expected for the 0.1% lattice mismatched could be measured.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of 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Fluoride Crystal on GaAs by High-Resolution X-ray Diffractometry","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"9","path":["73","36","330","322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-10-31"},"publish_date":"2012-10-31","publish_status":"0","recid":"2716","relation_version_is_last":true,"title":["高分解能X線回折法によるGaAs基板上のフッ化物薄膜結晶の評価"],"weko_creator_id":"9","weko_shared_id":-1},"updated":"2025-01-14T00:53:26.154312+00:00"}