{"created":"2023-05-15T09:58:41.344789+00:00","id":2689,"links":{},"metadata":{"_buckets":{"deposit":"4f9d3c8b-18ab-41cb-aea5-735ba60f031c"},"_deposit":{"created_by":5,"id":"2689","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2689"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002689","sets":["73","73:36","73:36:330","73:36:330:318"]},"author_link":["14031","12047","14032","14037","14030","14036","11920"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ゲンシソウ エピタキシーホウ ニ ヨリ サクセイ シタ GaAsハクマク ノ ヒョウカ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"200","bibliographicPageStart":"197","bibliographicVolumeNumber":"37","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Homoepitaxial GaAs layers grown on GaAs(001) by atomic layer epitaxy(ALE) technic are investigated. Growth temperatures are at 460, 500 and 540℃. Carrer concentrations of films were evaluated by a hall measurement technic and the parameter of fitting from Raman spectrum assumed by coupled plasmon-LO-phonon modes. The hole concentration was a maximum value at 500℃ growth intensity of photoluminescence at 10K has a maximum at 500℃ growth film. Hull width at half maximum of the LO phonon mode in raman spectrum also showed at the minimum the temperature.The growth temperature is suitable at 500℃ for GaAs film by ALE.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"藤田, 陽","creatorNameLang":"ja"},{"creatorName":"フジタ, 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雅志","creatorNameLang":"ja"},{"creatorName":"オゼキ, マサシ","creatorNameLang":"ja-Kana"},{"creatorName":"Ozeki, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"藤田, 陽","creatorNameLang":"ja"},{"creatorName":"フジタ, アキラ","creatorNameLang":"ja-Kana"},{"creatorName":"Fujita, Akira","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kawano, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jinnai, Hironori","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00005016021.pdf","filesize":[{"value":"182.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00005016021.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2689/files/KJ00005016021.pdf"},"version_id":"447b983b-d87e-4048-a992-e177ca43327f"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"atomic layer epitaxy, GaAs, homoepitaxial growth, Photoluminescence, Raman scattering, Coupled Plasmon-LO-Phonon modes","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"原子層エピタキシー法により作製したGaAs薄膜の評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"原子層エピタキシー法により作製したGaAs薄膜の評価","subitem_title_language":"ja"},{"subitem_title":"Growth condition of Homoepitaxial GaAs layers grown by Atomic Layer Epitaxy","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","318"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2008-11-11"},"publish_date":"2008-11-11","publish_status":"0","recid":"2689","relation_version_is_last":true,"title":["原子層エピタキシー法により作製したGaAs薄膜の評価"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-11-28T00:48:03.890034+00:00"}