{"created":"2023-05-15T09:58:41.344789+00:00","id":2689,"links":{},"metadata":{"_buckets":{"deposit":"4f9d3c8b-18ab-41cb-aea5-735ba60f031c"},"_deposit":{"created_by":9,"id":"2689","owner":"5","owners":[9],"pid":{"revision_id":0,"type":"depid","value":"2689"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002689","sets":["73","73:36","73:36:330","73:36:330:318"]},"author_link":["14030","14031","14032","12047","11920","14030","14036","14037"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ゲンシソウ エピタキシーホウ ニ ヨリ サクセイ シタ GaAsハクマク ノ ヒョウカ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"200","bibliographicPageStart":"197","bibliographicVolumeNumber":"37","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Homoepitaxial GaAs layers grown on GaAs(001) by atomic layer epitaxy(ALE) technic are investigated. Growth temperatures are at 460, 500 and 540℃. Carrer concentrations of films were evaluated by a hall measurement technic and the parameter of fitting from Raman spectrum assumed by coupled plasmon-LO-phonon modes. The hole concentration was a maximum value at 500℃ growth intensity of photoluminescence at 10K has a maximum at 500℃ growth film. Hull width at half maximum of the LO phonon mode in raman spectrum also showed at the minimum the temperature.The growth temperature is suitable at 500℃ for GaAs film by ALE.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"item_10002_source_id_11","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"藤田, 陽","creatorNameLang":"ja"},{"creatorName":"フジタ, アキラ","creatorNameLang":"ja-Kana"},{"creatorName":"Fujita, 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Koji","creatorNameLang":"en"}],"familyNames":[{"familyName":"前田","familyNameLang":"ja"},{"familyName":"マエダ","familyNameLang":"ja-Kana"},{"familyName":"Maeda","familyNameLang":"en"}],"givenNames":[{"givenName":"幸治","givenNameLang":"ja"},{"givenName":"コウジ","givenNameLang":"ja-Kana"},{"givenName":"Koji","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12047","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"50219268","nameIdentifierScheme":"e-Rad_Researcher","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=50219268"}]},{"creatorNames":[{"creatorName":"尾関, 雅志","creatorNameLang":"ja"},{"creatorName":"オゼキ, マサシ","creatorNameLang":"ja-Kana"},{"creatorName":"Ozeki, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"11920","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"藤田, 陽","creatorNameLang":"ja"},{"creatorName":"フジタ, アキラ","creatorNameLang":"ja-Kana"},{"creatorName":"Fujita, 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