@article{oai:miyazaki-u.repo.nii.ac.jp:00002689,
 author = {藤田, 陽 and Fujita, Akira and 川野, 雅史 and 陣内, 宏基 and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 尾関, 雅志 and Ozeki, Masashi and 藤田, 陽 and Fujita, Akira and Kawano, Masashi and Jinnai, Hironori},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Homoepitaxial GaAs layers grown on GaAs(001) by atomic layer epitaxy(ALE) technic are investigated. Growth temperatures are at 460, 500 and 540℃. Carrer concentrations of films were evaluated by a hall measurement technic and the parameter of fitting from Raman spectrum assumed by coupled plasmon-LO-phonon modes. The hole concentration was a maximum value at 500℃ growth intensity of photoluminescence at 10K has a maximum at 500℃ growth film. Hull width at half maximum of the LO phonon mode in raman spectrum also showed at the minimum the temperature.The growth temperature is suitable at 500℃ for GaAs film by ALE.},
 pages = {197--200},
 title = {原子層エピタキシー法により作製したGaAs薄膜の評価},
 volume = {37},
 year = {2008},
 yomi = {フジタ, アキラ and カワノ, マサシ and ジンナイ, ヒロノリ and マエダ, コウジ and オゼキ, マサシ and フジタ, アキラ}
}