{"created":"2023-05-15T09:58:40.475393+00:00","id":2670,"links":{},"metadata":{"_buckets":{"deposit":"8b87b2c7-8020-47a1-b3a3-5b7fda3afb67"},"_deposit":{"created_by":5,"id":"2670","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2670"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002670","sets":["73","73:36","73:36:330","73:36:330:318"]},"author_link":["13008","22251","7290","13004","12061"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ホットプレスホウ ニ ヨル AgInSe2 バルク ケッショウ ノ ケッショウ セイチョウ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"106","bibliographicPageStart":"99","bibliographicVolumeNumber":"37","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Undoped polycrystalline AgInSe2 bulk crystals were successfully grown at low temperature (700℃) using Hot-Press Method. The starting materials were stoichiometrically mixed Ag2Se and In2Se3 powders. The size of all samples was 2 cm in diameter. The samples were evaluated X-ray diffraction, SEM, EPMA, Density measurement, Hall measurement and optical transmittance measurement. We obtained AgInSe2 single phase at 700℃. The grain size was approximately 80 nm and the presence of lattice defects such as Se atom in the Ag site and/or Se atom in the In site might lead to an enhancement in n-type electrical conductivity at 700℃. The crystal at 700℃ had a resistivity of 0.16 Ωcm, a carrier concentration of (7.6×10)16 cm-3 and a mobility of 73 cm2V-1s-1 obtained by Hall measurement at RT. From optical transmittance measurement, the bandgap was estimated to be 1.204 eV at RT.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"木下, 綾","creatorNameLang":"ja"},{"creatorName":"キノシタ, アヤ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"白幡, 泰浩","creatorNameLang":"ja"},{"creatorName":"シラハタ, ヤスヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Shirahata, Yasuhiro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Yoshino, Kenji","creatorNameLang":"en"},{"creatorName":"吉野, 賢二","creatorNameLang":"ja"},{"creatorName":"ヨシノ, ケンジ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"},{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Kinoshita, Aya","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"白幡, 泰浩","creatorNameLang":"ja"},{"creatorName":"シラハタ, ヤスヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Shirahata, Yasuhiro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"KJ00005015919.pdf","filesize":[{"value":"574.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00005015919.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2670/files/KJ00005015919.pdf"},"version_id":"85121ef1-b997-47d5-bcbd-aca6d3d7d0a3"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Chalcopyrite, AgInSe2, Hot-Press, bulk crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"ホットプレス法によるAgInSe2バルク結晶の結晶成長","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ホットプレス法によるAgInSe2バルク結晶の結晶成長","subitem_title_language":"ja"},{"subitem_title":"Crystal growth of AgInSe2 bulk crystals grown by Hot-Press Method","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","318"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2008-11-11"},"publish_date":"2008-11-11","publish_status":"0","recid":"2670","relation_version_is_last":true,"title":["ホットプレス法によるAgInSe2バルク結晶の結晶成長"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-11-21T02:17:00.157666+00:00"}