@article{oai:miyazaki-u.repo.nii.ac.jp:00002670,
 author = {木下, 綾 and 白幡, 泰浩 and Shirahata, Yasuhiro and Yoshino, Kenji and 吉野, 賢二 and Ikari, Tetsuo and 碇, 哲雄 and Kinoshita, Aya and 白幡, 泰浩 and Shirahata, Yasuhiro},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {Undoped polycrystalline AgInSe2 bulk crystals were successfully grown at low temperature (700℃) using Hot-Press Method. The starting materials were stoichiometrically mixed Ag2Se and In2Se3 powders. The size of all samples was 2 cm in diameter. The samples were evaluated X-ray diffraction, SEM, EPMA, Density measurement, Hall measurement and optical transmittance measurement. We obtained AgInSe2 single phase at 700℃. The grain size was approximately 80 nm and the presence of lattice defects such as Se atom in the Ag site and/or Se atom in the In site might lead to an enhancement in n-type electrical conductivity at 700℃. The crystal at 700℃ had a resistivity of 0.16 Ωcm, a carrier concentration of (7.6×10)16 cm-3 and a mobility of 73 cm2V-1s-1 obtained by Hall measurement at RT. From optical transmittance measurement, the bandgap was estimated to be 1.204 eV at RT.},
 pages = {99--106},
 title = {ホットプレス法によるAgInSe2バルク結晶の結晶成長},
 volume = {37},
 year = {2008},
 yomi = {キノシタ, アヤ and シラハタ, ヤスヒロ and ヨシノ, ケンジ and イカリ, テツオ and シラハタ, ヤスヒロ}
}