@article{oai:miyazaki-u.repo.nii.ac.jp:00002668,
 author = {木下, 綾 and 白幡, 泰浩 and Shirahata, Yasuhiro and Yoshino, Kenji and 吉野, 賢二 and Ikari, Tetsuo and 碇, 哲雄 and Kinoshita, Aya and 白幡, 泰浩 and Shirahata, Yasuhiro},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Aug},
 note = {AgGaSe2 crystals with changing Ag/Ga ratio were grown by a Hot-Press method at 700 °C under 25 MPa for 1 hour. In all photoluminescence (PL) spectra, 2 kinds of exciton peaks were observed at 1.805 and 1.813 eV. Ag-rich sample indicated 2 dominant emissions, one was a free to acceptor emission and the other was donor-acceptor pair emission. On the other hand, a free to acceptor emission was only observed in the Ga-rich sample. These indicated that Se-vacancy (19 meV) and Ga-vacancy (61 meV) defects were existed in the Ag-rich sample and Ag-vacancy (77 meV) defects were existed in Ga-rich sample.},
 pages = {81--87},
 title = {AgGaSe2バルク結晶のフォトルミネッセンス特性},
 volume = {37},
 year = {2008},
 yomi = {キノシタ, アヤ and シラハタ, ヤスヒロ and ヨシノ, ケンジ and イカリ, テツオ and シラハタ, ヤスヒロ}
}