{"created":"2023-05-15T09:58:38.316140+00:00","id":2625,"links":{},"metadata":{"_buckets":{"deposit":"3da4ee87-d07f-4857-8404-3f1a3a2f6a93"},"_deposit":{"created_by":5,"id":"2625","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2625"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002625","sets":["73","73:36","73:36:330","73:36:330:323"]},"author_link":["13558","14384","12038","13561"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"PLDホウ オ モチイタ Si-Mn ハクマク セイチョウ ノ ショキ カテイ ノ カンサツ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-08-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"39","bibliographicPageStart":"35","bibliographicVolumeNumber":"42","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Recently, thin films of Si-Mn compound in atomic scale have been studied for developing the diluted magnetic semiconductors. In this study, we focused on the behavior of Mn particles on Si(111) surface by pulsed laser deposition (PLD) method. Especially, we observed the adsorption site and its dependence on temperature of the substrate. The substrate used was cleaned Si(111) plate. Mn particles were supplied by the PLD method and a scanning tunneling microscope (STM) was used for the observation. In this work, we observed a change of adsorption site with the temperature change and the surrounding adsorbed particles. We observed the change in the absorption site and the surface structure of the substrate surrounding the Mn particles with the temperature change of RT ～ 200℃. As a result, we clarified the behavior of the particles on the Si(111) clean surface of Mn. These results are expected to be useful information for understanding a mechanism for the formation of Si-Mn very thin film.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"宇野, 貴大","creatorNameLang":"ja"},{"creatorName":"ウノ, タカヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Uno, Takahiro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"木原, 亮太"},{"creatorName":"キハラ, リョウタ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Yokotani, Atsushi","creatorNameLang":"en"},{"creatorName":"横谷, 篤至","creatorNameLang":"ja"},{"creatorName":"ヨコタニ, アツシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"宇野, 貴大","creatorNameLang":"ja"},{"creatorName":"ウノ, タカヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Uno, Takahiro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kihara, Ryouta","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"engineering35-39.pdf","filesize":[{"value":"975.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"engineering35-39.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2625/files/engineering35-39.pdf"},"version_id":"8a088580-ecc0-43f5-9550-45ea370a2807"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"STM, PLD, Diluted magnetic semiconductor, Adosorption, Mn","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"PLD法を用いたSi-Mn薄膜成長の初期過程の観察","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"PLD法を用いたSi-Mn薄膜成長の初期過程の観察","subitem_title_language":"ja"},{"subitem_title":"Observation of the Initial Stage of Si-Mn Thin Film Formation Process by PLD Method","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","323"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2013-12-25"},"publish_date":"2013-12-25","publish_status":"0","recid":"2625","relation_version_is_last":true,"title":["PLD法を用いたSi-Mn薄膜成長の初期過程の観察"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-11-27T05:33:28.791117+00:00"}