{"created":"2023-05-15T09:58:37.452872+00:00","id":2611,"links":{},"metadata":{"_buckets":{"deposit":"86a1c7d7-3c58-44e6-b763-c710def50185"},"_deposit":{"created_by":5,"id":"2611","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"2611"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00002611","sets":["73","73:36","73:36:330","73:36:330:320"]},"author_link":["13456","13453","12038","13457","14041","13452"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"PLDホウ ニヨル ハクマク ケイセイ ノ ショキ カテイ ノ カンサツ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-09-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"178","bibliographicPageStart":"173","bibliographicVolumeNumber":"39","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Pulsed laser deposition (PLD) is a method using a simple device that can form film under various conditions and can be used for research of film growth. However, it is difficult to achieve forming films of good quality because of a lot of unknown points in the mechanisms. In order to clarify the mechanism of the deposition process in PLD method, we have observed the initial stage of film deposition process on the Si(111)-7×7 surface. In the present work, we have compared to the results on Si3N4 and SiC thin films. An ultra-high-vacuum scanning tunneling microscope (UHV-STM) was used for the observation of surface morphologies. Sintered Si3N4, single crystalline Si, HOPG and pressed C60 were used for the PLD targets. Our results suggest that by PLD method, particles ablated from targets adsorbed onto the substrate surface without destroying the structure of substrate surface. We also used a Time of Flight Mass Spectrometry (TOF-MS) to analyze ablated particle. Our results suggest that single atomic particles are ablated in PLD process. For the each targets, we have clarified the adsorption sites, adsorption probabilities, size and shape of adsorbed particles. These results are expected to be useful information for clarification of the mechanism of the deposition process of PLD method.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"岡崎, 裕太郎","creatorNameLang":"ja"},{"creatorName":"オカザキ, ユウタロウ","creatorNameLang":"ja-Kana"},{"creatorName":"Okazaki, Yutaro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"カイリル, ヌルフスナ ビンティ"},{"creatorName":"カイリル, ヌルフスナ ビンティ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Katto, Masahito","creatorNameLang":"en"},{"creatorName":"甲藤, 正人","creatorNameLang":"ja"},{"creatorName":"カットウ, マサヒト","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Yokotani, Atsushi","creatorNameLang":"en"},{"creatorName":"横谷, 篤至","creatorNameLang":"ja"},{"creatorName":"ヨコタニ, アツシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"岡崎, 裕太郎","creatorNameLang":"ja"},{"creatorName":"オカザキ, ユウタロウ","creatorNameLang":"ja-Kana"},{"creatorName":"Okazaki, Yutaro","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Khairir, Nurulhusna Binti","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Katto, Masato","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"engineering39-28.pdf","filesize":[{"value":"962.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"engineering39-28.pdf","url":"https://miyazaki-u.repo.nii.ac.jp/record/2611/files/engineering39-28.pdf"},"version_id":"0dcc1156-8741-4d3f-a64a-e99ccad3cf98"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"PLD, STM, Initial stage, Si(111), C60","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"PLD法による薄膜形成の初期過程の観察","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"PLD法による薄膜形成の初期過程の観察","subitem_title_language":"ja"},{"subitem_title":"Observation of the Initial Stage of Thin Film Formation Process by PLD Method","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","320"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2011-02-25"},"publish_date":"2011-02-25","publish_status":"0","recid":"2611","relation_version_is_last":true,"title":["PLD法による薄膜形成の初期過程の観察"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-11-27T05:37:08.308922+00:00"}